低剂量SIMOX晶圆中吸积层的形成

1995 IEEE International SOI Conference Proceedings Pub Date : 1995-10-03 DOI:10.1109/SOI.1995.526447

J. Jabłoński, M. Saito, M. Imai, S. Nakashima

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引用次数: 4

摘要

分析了低剂量SIMOX硅片中SFT的产生机理。结果发现，与BOX中的微缺陷相比，这些微缺陷在顶部Si层内的产生受到了强烈的抑制。此外，这两种过程发生在高温退火的不同阶段，因此可以通过适当优化退火条件来控制。因此，似乎可以生产具有无缺陷的顶部Si膜和位于BOX下方的吸积层的SIMOX晶圆。

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Gettering layer formation in low-dose SIMOX wafers

The mechanism of SFT generation in low-dose SIMOX wafers was analyzed. It was found that generation of these microdefects inside the top Si layer is strongly suppressed in comparison with those in the BOX. Moreover, both processes occur at different stages of high temperature annealing and thus can be controlled by the proper optimization of annealing conditions. As a result, it seems possible to produce SIMOX wafers with a defect-free top Si film and a gettering layer located beneath the BOX.

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1995 IEEE International SOI Conference Proceedings

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