HiSIM:一种基于漂移扩散的先进MOSFET模型，用于电路仿真，参数提取容易

2000 International Conference on Simulation Semiconductor Processes and Devices (Cat. No.00TH8502) Pub Date : 2000-09-06 DOI:10.1109/SISPAD.2000.871258

M. Suetake, K. Suematsu, H. Nagakura, M. Miura-Mattausch, H. Mattausch, S. Kumashiro, T. Yamaguchi, S. Odanaka, N. Nakayama

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引用次数: 31

摘要

我们在这里提出了MOSFET模型HiSIM(广岛大学Starc IGFET模型)。由于HiSIM采用了漂移-扩散近似，保留了对通道内表面电位的正确建模，不仅精度高，而且模型参数数量少，消除了参数的相互依赖性，参数提取容易。因此，仅用19个模型参数即可再现先进mosfet的测量电流-电压特性。

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HiSIM: a drift-diffusion-based advanced MOSFET model for circuit simulation with easy parameter extraction

We present here the MOSFET model HiSIM (Hiroshima University Starc IGFET model). As HiSIM employs the drift-diffusion approximation and preserves correct modeling of the surface potential in the channel, it is not only accurate, but additionally, model parameter number is small, parameter interdependence is removed, and parameter extraction becomes easy. Measured current-voltage characteristics of advanced MOSFETs are thus reproduced with only 19 model parameters.

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2000 International Conference on Simulation Semiconductor Processes and Devices (Cat. No.00TH8502)

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