FDSOI Mosfet栅极介电击穿的Vd依赖性

2018 International Integrated Reliability Workshop (IIRW) Pub Date : 2018-10-01 DOI:10.1109/IIRW.2018.8727096

X. Federspiel, M. Rafik, M. Arabi, A. Cros, F. Cacho

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引用次数: 3

摘要

在28nm FDSOI MOSfet器件上进行了非均匀场TTDB应力测试。通过分析漏极电压增大时的热效应，以及潜在的tdd - hci相互作用，得到了考虑非均匀场和自热的完整的TTDB模型。

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FDSOI Mosfet gate dielectric breakdown Vd dependancy

non uniform field TTDB stress have been performed on 28nm FDSOI MOSfet devices. After analysis of thermal effects under increasing drain voltage, as well as potential TDDB-HCI interactions, a complete TTDB model, taking into account non uniform field and self-heating is confronted to experimental data.

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2018 International Integrated Reliability Workshop (IIRW)

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