A. Nishii, Katsumi Nakamura, F. Masuoka, T. Terashima
{"title":"由于RFC技术和稳健的FWD操作的镇流器电阻，电流灯丝的松弛","authors":"A. Nishii, Katsumi Nakamura, F. Masuoka, T. Terashima","doi":"10.1109/ISPSD.2011.5890799","DOIUrl":null,"url":null,"abstract":"We have investigated the destruction mechanism of High Voltage (HV) Free Wheeling Diodes (FWD) during a reverse recovery operation. The most possible mode of the destruction phenomena originate in local heating due to current filament at the edge portion of the active area. To achieve a large reverse recovery Safe Operation Area (SOA), we focus on the boundary region between the active area and the termination area. To enforce our Relaxed Field of Cathode (RFC) concept [1, 2], it is more effective for the wider SOA to place a ballast resistance for avoiding the current from crowding around the anode region in the top surface of the diode.","PeriodicalId":132504,"journal":{"name":"2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs","volume":"28 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"22","resultStr":"{\"title\":\"Relaxation of current filament due to RFC technology and ballast resistor for robust FWD operation\",\"authors\":\"A. Nishii, Katsumi Nakamura, F. Masuoka, T. Terashima\",\"doi\":\"10.1109/ISPSD.2011.5890799\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We have investigated the destruction mechanism of High Voltage (HV) Free Wheeling Diodes (FWD) during a reverse recovery operation. The most possible mode of the destruction phenomena originate in local heating due to current filament at the edge portion of the active area. To achieve a large reverse recovery Safe Operation Area (SOA), we focus on the boundary region between the active area and the termination area. To enforce our Relaxed Field of Cathode (RFC) concept [1, 2], it is more effective for the wider SOA to place a ballast resistance for avoiding the current from crowding around the anode region in the top surface of the diode.\",\"PeriodicalId\":132504,\"journal\":{\"name\":\"2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs\",\"volume\":\"28 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2011-05-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"22\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISPSD.2011.5890799\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.2011.5890799","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Relaxation of current filament due to RFC technology and ballast resistor for robust FWD operation
We have investigated the destruction mechanism of High Voltage (HV) Free Wheeling Diodes (FWD) during a reverse recovery operation. The most possible mode of the destruction phenomena originate in local heating due to current filament at the edge portion of the active area. To achieve a large reverse recovery Safe Operation Area (SOA), we focus on the boundary region between the active area and the termination area. To enforce our Relaxed Field of Cathode (RFC) concept [1, 2], it is more effective for the wider SOA to place a ballast resistance for avoiding the current from crowding around the anode region in the top surface of the diode.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
