圈闭与fwd逆采特征的相关性研究

Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005. Pub Date : 2005-05-23 DOI:10.1109/ISPSD.2005.1487996

T. Sugiyama, S. Yamazaki, S. Nakagaki, M. Ishiko

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引用次数: 7

摘要

本工作的目的是澄清陷阱和自由旋转二极管(FWDs)的反向恢复特性之间的关系。用深能级瞬态光谱研究了FWD中诱导的陷阱，用陷阱模型测量和模拟了带IGBT的FWD的反向恢复特性。研究发现，浅能级和深能级圈闭的浓度差异对逆采特性影响较大。因此，带电阱浓度的增加导致反向恢复过程中产生的电压峰值降低。

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A study of correlation between traps and reverse-recovery characteristics of FWDs

The purpose of this work is to clarify the correlation between traps and reverse-recovery characteristics of freewheeling diodes (FWDs). The traps induced in FWDs have been examined by deep level transient spectroscopy and the reverse-recovery characteristics of FWD with IGBT have been measured and simulated with a trap model. It was found that the difference in the concentration of traps with a shallow and with a deep energy level has a large influence on the reverse-recovery characteristics. Consequently, an increase in the concentration of the charged traps leads to lowering of the peak in voltage generated during reverse-recovery.

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Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005.

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