隧道窗形成过程中的工艺变化及其对FLOTOX EEPROM器件可靠性性能的影响

ICSE 2000. 2000 IEEE International Conference on Semiconductor Electronics. Proceedings (Cat. No.00EX425) Pub Date : 2000-11-13 DOI:10.1109/SMELEC.2000.932462

K. Lai, P. Lim, W. Chim, Yang Pan

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引用次数: 0

摘要

在隧道窗口形成期间，缓冲氧化物蚀刻(BOE)持续时间的工艺变化可能导致浮动栅隧道氧化物(FLOTOX)电可擦除和可编程只读存储器(EEPROM)设备在写/擦除耐久性测试期间表现出增强的窗口关闭效应。BOE持续时间不足的器件的电气和物理特性表明，在隧道氧化物生长之前，在隧道窗口形成之后，存在质量差或“粗糙”的氧化区(表现出增强的电子捕获)。

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Process variation during tunnel window formation and its impact on the reliability performance of FLOTOX EEPROM devices

Process variation in the buffered oxide etch (BOE) duration during tunnel window formation can cause floating-gate tunnel-oxide (FLOTOX) electrically erasable and programmable read-only memory (EEPROM) devices to exhibit enhanced window closure effect during write/erase endurance tests. Electrical and physical characterisation of devices with insufficient BOE duration indicated the presence of a poor quality or "crabby" oxide region (exhibiting enhanced electron trapping) remaining after tunnel window formation before tunnel oxide growth.

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ICSE 2000. 2000 IEEE International Conference on Semiconductor Electronics. Proceedings (Cat. No.00EX425)

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