用于MEMS气体传感器的250 μW 0.194 nV/rtHz斩波稳定仪表放大器

J. Nebhen, S. Meillére, M. Masmoudi, J. Seguin, H. Barthélemy, K. Aguir
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引用次数: 3

摘要

本文提出了一种低噪声、低功耗、低电压的斩波稳定CMOS放大器(CHS-A),并利用AMS 0.35 μm CMOS工艺的晶体管模型参数对其进行了仿真。斩波是用来调制偏移量远离输出信号,它可以很容易地过滤掉,提供连续的偏移量减少,这是不敏感的漂移。采用AMS的0.35 μm CMOS工艺技术[1]的典型晶体管模型参数BSIM 3V3对CHS进行了仿真。在±1.25 V电源和49dB增益下,总功耗仅为250 μW。在相同的仿真条件下,在1 kHz ~ 10 kHz的频率范围内,本底噪声为0.194 nV/√Hz,带内PSRR大于90,CMRR大于120 dB。该电路的有效小芯片面积为3.233 mm2。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A 250 μW 0.194 nV/rtHz Chopper-Stabilized instrumentation amplifier for MEMS gas sensor
In this paper, a low-noise, low-power and low voltage Chopper Stabilized CMOS Amplifier (CHS-A) is presented and simulated using transistor model parameters of the AMS 0.35 μm CMOS process. Chopping is used to modulate the offset away from the output signal where it can be easily filtered out, providing continuous offset reduction which is insensitive to drift. The CHS was simulated using typical transistor model parameters BSIM 3V3 of the 0.35 μm CMOS process technology from AMS [1]. Under at ±1.25 V power supply and a voltage gain of 49dB, the total power consumption is 250 μW only. At the same simulation condition, it achieves a noise floor of 0.194 nV/√Hz within the frequency range from 1 kHz to 10 kHz and the inband PSRR is above 90, the CMRR exceeds 120 dB. The circuit occupies an effective small chip area of 3.233 mm2.
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