后端工艺对0.18um BCD NLDMOS on-state BV特性的新研究

2019 IEEE 26th International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA) Pub Date : 2019-07-01 DOI:10.1109/IPFA47161.2019.8984790

Shuxian Chen, Feng Lin, Bin Yang, Chunxu Li, Yu Huang

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引用次数: 0

摘要

随着功率集成电路在各种工业和消费层面的不断扩展，对横向双扩散MOS(LDMOS)特性的要求越来越高。LDMOS的BVon特性对于汽车电子等高端领域的宽安全操作区域(SOA)要求至关重要。本文基于0.18μm双极CMOS- dmos (BCD)中高压工艺平台的模块化设计，该工艺平台不仅要考虑引入高压工艺对CMOS的影响，还要考虑为嵌入式非易失性存储器(E-NVM)定制的特殊后端氧化层(BEOL)工艺对高压器件的影响。针对NLDMOS导通击穿电压不足和片上均匀性差的问题，研究了BEOL工艺对NLDMOS导通击穿特性的影响机理。

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A new study of backend process on 0.18um BCD NLDMOS on-state BV characteristics

With the continuous expansion of power ICs in various industrial and consumer levels, the requirements for Laterally-Double-Diffused MOS(LDMOS) characteristics are getting more and more aggressive. BVon characteristics of LDMOS is rather critical for wide Safe Operation Area (SOA), requesting in higher-end fields such as automotive electronics. In this paper, based on the modular design of the 0.18μm Bipolar-CMOS-DMOS (BCD) medium and high voltage process platform, the process platform should not only consider the impact of the introduction of high-voltage process on CMOS, but also the impact of the special Back- End-Oxide-Layer(BEOL) process customized for embeds Non-Volatile Memory (E-NVM) on high-voltage devices. For the problem of insufficient on-state breakdown voltage (BVon) and poor on-chip uniformity of NLDMOS, we studied the influence mechanism about BEOL process on NLDMOS BVon characteristic.

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来源期刊

2019 IEEE 26th International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA)

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