高k材料对纳米晶存储器控制介电堆的影响

Proceedings of the 30th European Solid-State Circuits Conference (IEEE Cat. No.04EX850) Pub Date : 2004-11-15 DOI:10.1109/ESSDER.2004.1356514

E. Spitale, D. Corso, I. Crupi, G. Nicotra, S. Lombardo, D. Deleruyelle, M. Gely, N. Buffet, B. De Salvo, C. Gerardi

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引用次数: 4

摘要

本文研究了硅纳米晶存储器中FN隧穿的程序/擦除特性。在使用薄隧道氧化物、硅点作为电荷存储介质、CVD二氧化硅作为控制电介质的记忆电池的情况下，从实验数据和模拟之间的非常好的一致性出发，我们提出了当控制电介质中存在高k材料时电荷捕获的估计值。然后，我们展示了含有高k材料的控制电介质的纳米晶体存储器的初步结果。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Effect of high-k materials in the control dielectric stack of nanocrystal memories

In this paper, we studied program/erase characteristics by FN tunneling in Si nanocrystal memories. Starting from a very good agreement between experimental data and simulations in the case of a memory cell with a thin tunnel oxide, silicon dots as medium for charge storage, and a CVD silicon dioxide used as control dielectric, we present estimated values of the charge trapping when a high-k material is present in the control dielectric. We then show preliminary results of nanocrystal memories with control dielectric containing high-k materials.

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Proceedings of the 30th European Solid-State Circuits Conference (IEEE Cat. No.04EX850)

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