绝缘体上的硅——植入电子器件的完美材料?

A. Marshall, C. Cleavelin, W. Xiong, C. Pacha, C. Russ, K. von Arnim, T. Schulz, K. Schruefer, G. Knoblinger, P. Patruno
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引用次数: 0

摘要

硅铸造厂的SOI的可用性使SOI成为植入式电子设备的可行选择。该领域有一些与许多传统电子应用不同的特定需求。低功率运行是必不可少的,但间歇性的高功率要求和需要长期的可靠性。相反,电路运行速度要求往往极低;包括只有几千赫的监控。数据存储(内存)需求也可能相对较低。此外,与许多非植入式应用相比,植入式设备的工作温度范围较低。与传统的“块状”硅相比,这些要求是根据绝缘体上硅(SOI)作为这种环境中选择的半导体材料的独特属性进行评估的。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Silicon on Insulator - The Perfect Material for Implantable Electronics?
The availability of SOI from silicon foundries is making SOI a viable option for implantable electronics devices. The field has some specific needs that are different to many conventional electronics applications. Low power operation is essential but with intermittent high power requirements and the need for long term reliability. Conversely, circuit operating speed requirements are often extremely low; including monitoring at only a few KHz. Data storage (memory) requirements may also be relatively low. Furthermore, the operating temperature range of implanted devices is low compared to many non-implantable applications. These requirements together are assessed against the unique attributes of silicon on insulator (SOI) as a semiconductor material of choice for this environment, compared to that of conventional 'bulk' silicon.
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