片上冷却和能量收集用薄膜热电器件的负荷依赖性评价

S. H. Choday, K. Kwon, K. Roy
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引用次数: 4

摘要

薄膜热电(TE)材料的最新进展为片上冷却和热通量达到100W/cm2的能量收集创造了机会。然而,目前尚不清楚这些材料在实际微处理器布局和工作负载下的效果如何。此外,这些TE材料受到接触寄生的影响,会严重影响其性能。为了评估片上TE器件的工作负载相关性能,我们开发了一种分层仿真方法,该方法将架构模拟器和功率估计工具与能够模拟TE器件的热模拟器连接起来。对著名的HotSpot热模拟器进行了改进,在TE模块中加入了TE方程和接触寄生。SimpleScalar和McPAT用于在一个无序处理器中跨SPEC2000工作负载生成不同功能单元的运行时功率。我们的TE增强型热点模拟器使用McPAT生成的功率图来评估片上TE模块的冷却和收集能力。我们的研究结果表明,可以在热点处获得11°C的峰值冷却,或者从热点获取高达85mW的功率。我们还表明,片上TE器件可以帮助将处理器的时钟频率从1200MHz提高到1600MHz,在恒温情况下与无TE情况进行比较。该框架还允许TE模块的材料/物理参数的快速设计空间探索,以及TE模块在芯片平面上的最佳放置选项。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Workload dependent evaluation of thin-film thermoelectric devices for on-chip cooling and energy harvesting
The recent advances in thin-film thermoelectric (TE) materials have created opportunities for on-chip cooling and energy-harvesting with heat-fluxes >100W/cm2. However, it remains unclear how effective these materials are in the context of realistic microprocessor floorplan and workloads. Moreover, these TE materials suffer from contact parasitics that can significantly impact their performance. To evaluate the workload dependent performance of on-chip TE devices, we developed a hierarchical simulation methodology that connects an architectural simulator and a power estimation tool with a thermal simulator capable of simulating TE devices. The well-known HotSpot thermal simulator is modified to incorporate TE equations along with contact parasitics in the TE module. SimpleScalar and McPAT were used to generate the runtime power of different functional units in an Out-of-Order processor across the SPEC2000 workloads. The power-map generated by McPAT is used by our TE enhanced HotSpot simulator to evaluate the cooling and harvesting capabilities of on-chip TE modules. Our results indicate that it is possible to obtain 11°C peak cooling at the hot-spots, or harvest upto 85mW of power from the hot-spots. We also show that on-chip TE devices can aid in boosting the clock frequency of the processor from 1200MHz to 1600MHz under iso-temperature comparison with the no-TE case. This framework also allows for the rapid design space exploration of TE module's material/physical parameters and the optimum placement options for the TE module on the chip floorplan.
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