Influence of External Electric Field on Dielectric Properties of Si–C60–InGa Structures in the Wagner-Koops Model

The article deals with the influence of an external electric field on the maximum dielectric loss tangent $(\text{tg}\delta)_{max}$ and relaxation time $\tau$ in Si(p)–C60–InGa structures. The results of the description of the dependencies $(\text{tg}\delta)_{max}(\mathrm{U}_{bias})$ and $\tau(\mathrm{U}_{bias})$ using the Wagner-Koops «grain-layer» model and the Debye equations are given. According to the above model, the experimental results of $(\text{tg}\delta)_{max}$ are well approximated at an electric field strength of $F > 2.4\ \text{MV}/\mathrm{m}$. The maximum relaxation time is $\tau=22$ ms and is observed at $F=2.8\text{MV}/\mathrm{m}$.