高功率4H-SiC VJFET及其等效GaAs的仿真

Digest of Technical Papers. PPC-2003. 14th IEEE International Pulsed Power Conference (IEEE Cat. No.03CH37472) Pub Date : 2003-06-15 DOI:10.1109/PPC.2003.1277674

Q. Shui, X. Gu, C. Myles, M. Mazzola, M. Gundersen

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引用次数: 7

摘要

本文利用二维仿真器ATLAS对基于SiC和GaAs材料的VJFET的阻压能力、电流额定值和开关特性进行了研究和比较。作为本研究的一部分，提出了具有8 kV阻断电压的正常关断的4H-SiC VJFET的仿真和分析，以及其GaAs对应物的类似结果。该结构经过优化，可实现高阻断电压和高电流密度。这项工作的目的是比较SiC VJFET与类似GaAs VJFET的性能，并为脉冲功率应用提供指导。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Simulations of a high power 4H-SiC VJFET and its GaAs counterpart

In this paper, the 2D simulator ATLAS is used to investigate and compare the voltage blocking capability, the current rating and the switching characteristics of VJFET's based on SiC and GaAs materials. As a part of this study, simulations and analysis of a normally-off 4H-SiC VJFET with 8 kV blocking voltage are presented, along with similar results for its GaAs counterpart. This structure is optimized to achieve a high blocking voltage and a high current density. The goal of this work is to compare the performance of a SiC VJFET with that of a similar GaAs VJFET, and to provide guidelines for pulsed power applications.

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Digest of Technical Papers. PPC-2003. 14th IEEE International Pulsed Power Conference (IEEE Cat. No.03CH37472)

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