准垂直GaN SBD器件结构及参数优化

Xu Xiucheng, Cheng Haijuan, Qin Yalong, Li Jing, G. Weiling
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引用次数: 0

摘要

以小尺寸保证高的反向击穿电压,改善器件终端结构的电场均匀性。本文是在仿真计算的基础上对立式功率器件进行优化。建立GaN垂直SBD模型,N-GaN漂移层厚度为4μm-5μm,掺杂浓度为1.5×1016cm-3。N+GaN电流延伸层掺杂浓度为1019cm-3。在确定电流膨胀层厚度为5μm的前提下,本文将电流膨胀层(Ln+gan1)厚度设为0.1μm,将N+GaN (Ln+ GaN)厚度设为0.6μm。将优化后的Lac1和Lac2分别设置为10μm和5μm。优化后的准垂直SBD导通电阻从0.93 mΩ•cm2降低到0.55 mΩ•cm2,击穿电压从530V提高到560V。其次对器件的终端结构进行了优化,确定钝化层厚度为0.4μm,场极板长度为8μm。最后比较了两种终端结构对器件的影响,场极板对器件的正向特性没有影响。优化后导通电阻为0.565mΩ•cm2,器件击穿电压提高至632V。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Quasi-vertical GaN SBD device structure and parameter optimization
To ensure a high reverse breakdown voltage at a small size and improve the uniform electric field of the terminal structure of the device. This paper is based on simulation calculations to optimize the vertical power devices. Establish a model of GaN vertical SBD, N-GaN drift layer thickness is 4μm-5μm, the doping concentration is 1.5×1016cm-3. N+GaN the doping concentration of the current extension layer is 1019cm-3. Under the premise of determining the thickness of the current expansion layer as 5μm, this paper sets the thickness of current expansion layer (Ln+gan1) as 0.1μm,sets the thickness of N+GaN (Ln+gan) as 0.6μm. Then sets Lac1 and Lac2 optimized as 10μm and 5μm. The on-resistance of the optimized quasi-vertical SBD reduce from 0.93 mΩ•cm2 to 0.55 mΩ•cm2, breakdown voltage increase from 530V to 560V. Secondly this paper optimized the terminal structure of the device, determine the passivation layer thickness as 0.4μm, the length of field plate is 8μm. Finally, the influence of the two terminal structures on the device is compared, the field plate has no effect on the forward characteristics of the device. After optimization, the on-resistance is 0.565mΩ•cm2, increases the breakdown voltage of the device to 632V.
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