基于矩阵向量乘法的多电平忆阻器:离散化方法的影响

2021 13th Spanish Conference on Electron Devices (CDE) Pub Date : 2021-06-09 DOI:10.1109/CDE52135.2021.9455724

Antonio J. Pérez-Ávila, E. Pérez, J. Roldán, C. Wenger, F. Jiménez-Molinos

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引用次数: 3

摘要

研究了离散多电平记忆电阻器在矩阵向量乘法(MVM)中的应用。我们将重点分析用于将矩阵系数转换为忆阻器器件导电水平的离散化方法的作用。在硬件神经网络的背景下分析了MVM配置的含义，面向神经形态计算算法的优化。

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Multilevel memristor based matrix-vector multiplication: influence of the discretization method

A study on the use of memristors with discrete multilevel capability for the implementation of matrix-vector multiplication (MVM) is presented. We focus our analysis on the role of the discretization methodology employed to translate the matrix coefficients into the memristor device conductive levels. The implications on the MVM configurations are analysed in the context of hardware neural networks, oriented to the optimization of neuromorphic computing algorithms.

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2021 13th Spanish Conference on Electron Devices (CDE)

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