1200V反导IGBT

2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs Pub Date : 2004-05-24 DOI:10.1109/WCT.2004.239844

Hideki Takahashi, Aya Yamamoto, S. Aono, Tadaharu Minato

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引用次数: 78

摘要

本报告首次介绍了采用我司薄晶片工艺技术制造的1200 V反导IGBT (RC-IGBT)。制备的RC-IGBT可作为IGBT和自由旋转二极管(FWD)工作。我们的RC-IGBT采用氦辐照载流子寿命控制技术，制作的1200v / 100a芯片的基本特性可以达到与传统第三代pt型IGBT和FWD对相当的水平。Vce(sat)和关断损耗之间的权衡以及Vf和Err之间的相关性几乎与传统的第三代pt型IGBT和FWD对相同。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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1200V reverse conducting IGBT

This report is the first to present the newly developed 1200 V reverse conducting IGBT (RC-IGBT) manufactured by using our thin wafer process technology. The fabricated RC-IGBT operates as both IGBT and free wheeling diode (FWD). Adopting a helium-irradiation carrier lifetime controlling technology to our RC-IGBT, the essential characteristics of the fabricated 1200 V/100 A chip can achieve a level comparable to those of conventional 3rd generation PT-type IGBT and FWD pair. The trade off with Vce(sat) and turn-off loss and the correlation between Vf and Err is almost the same as the conventional 3rd generation PT-type IGBT and FWD pair.

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2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs

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