用于射频MEMS的未掺杂金刚石薄膜的电学特性

L. Michalas, M. Koutsoureli, E. Papandreou, G. Papaioannou, S. Saada, C. Mer, R. Hugon, P. Bergonzo, A. Leuliet, P. Martins, S. Bansropun, A. Ziaei
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引用次数: 10

摘要

在MEMS应用中,金刚石薄膜被认为是优于Si3N4的介质。本文对未掺杂微晶金刚石薄膜的电学特性进行了详细的表征研究,包括在宽温度范围内的直流和充放电瞬态分析。该研究的目的是更好地了解MEMS电容开关在不同操作条件下电荷注入和收集过程的物理机制。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Electrical characterization of undoped diamond films for RF MEMS application
Diamond films are considered as superior dielectric in comparison to Si3N4 for MEMS applications. The present paper provides a detail characterization study of electrical properties of undoped microcrystalline diamond films involving dc and charge/discharge transient analysis over a wide temperature range. The aim of the study is to provide a better insight on the physical mechanisms responsible for the charge injection and collection processes under different operation conditions applicable to MEMS capacitive switches.
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