{"title":"一种采用数字化多体偏置进行偏置抵消的低压SRAM感测放大器","authors":"Bingyan Liu, Yong Hei","doi":"10.1109/ASICON.2015.7516887","DOIUrl":null,"url":null,"abstract":"An offset cancelling technique with digitized multiple body biasing (DMBB) has been proposed. In this scheme, transistors threshold voltage mismatch in latch type sense amplifier (SA) is compensated by adjusting the body bias voltage digitally and repeatedly. Simulated results in 130-nm CMOS technology show that the proposed calibration technique can reduce the standard deviation of offset voltage by over 4X comparing to conventional sense amplifier. In addition, this calibration technique only introduces a little area overhead and some calibration clocks.","PeriodicalId":382098,"journal":{"name":"International Conference on ASIC","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"A low voltage SRAM sense amplifier with offset cancelling using digitized multiple body biasing\",\"authors\":\"Bingyan Liu, Yong Hei\",\"doi\":\"10.1109/ASICON.2015.7516887\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"An offset cancelling technique with digitized multiple body biasing (DMBB) has been proposed. In this scheme, transistors threshold voltage mismatch in latch type sense amplifier (SA) is compensated by adjusting the body bias voltage digitally and repeatedly. Simulated results in 130-nm CMOS technology show that the proposed calibration technique can reduce the standard deviation of offset voltage by over 4X comparing to conventional sense amplifier. In addition, this calibration technique only introduces a little area overhead and some calibration clocks.\",\"PeriodicalId\":382098,\"journal\":{\"name\":\"International Conference on ASIC\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Conference on ASIC\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ASICON.2015.7516887\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Conference on ASIC","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASICON.2015.7516887","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A low voltage SRAM sense amplifier with offset cancelling using digitized multiple body biasing
An offset cancelling technique with digitized multiple body biasing (DMBB) has been proposed. In this scheme, transistors threshold voltage mismatch in latch type sense amplifier (SA) is compensated by adjusting the body bias voltage digitally and repeatedly. Simulated results in 130-nm CMOS technology show that the proposed calibration technique can reduce the standard deviation of offset voltage by over 4X comparing to conventional sense amplifier. In addition, this calibration technique only introduces a little area overhead and some calibration clocks.