高效三态WCDMA PA集成高性能BiHEMT HBT / E-D pHEMT工艺

2008 IEEE Radio Frequency Integrated Circuits Symposium Pub Date : 2008-07-15 DOI:10.1109/RFIC.2008.4561406

T. Apel, T. Henderson, Yunxin Tang, O. Berger

{"title":"高效三态WCDMA PA集成高性能BiHEMT HBT / E-D pHEMT工艺","authors":"T. Apel, T. Henderson, Yunxin Tang, O. Berger","doi":"10.1109/RFIC.2008.4561406","DOIUrl":null,"url":null,"abstract":"Power amplifiers for WCDMA applications must provide competitive power efficiency at low power levels as well as at full power. This paper presents a novel approach to obtain high PAE performance over a wide power band from three power states. It uses a novel BiHEMT process to co-integrate InGaP/GaAs HBT technology with InGaAs/AlGaAs E/D-Mode pHEMT into a single process. No bias reference voltage is required. Typical ultra-low power mode quiescent current is 5 mA.","PeriodicalId":253375,"journal":{"name":"2008 IEEE Radio Frequency Integrated Circuits Symposium","volume":"6 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-07-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"13","resultStr":"{\"title\":\"Efficient three-state WCDMA PA integrated with high-performance BiHEMT HBT / E-D pHEMT process\",\"authors\":\"T. Apel, T. Henderson, Yunxin Tang, O. Berger\",\"doi\":\"10.1109/RFIC.2008.4561406\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Power amplifiers for WCDMA applications must provide competitive power efficiency at low power levels as well as at full power. This paper presents a novel approach to obtain high PAE performance over a wide power band from three power states. It uses a novel BiHEMT process to co-integrate InGaP/GaAs HBT technology with InGaAs/AlGaAs E/D-Mode pHEMT into a single process. No bias reference voltage is required. Typical ultra-low power mode quiescent current is 5 mA.\",\"PeriodicalId\":253375,\"journal\":{\"name\":\"2008 IEEE Radio Frequency Integrated Circuits Symposium\",\"volume\":\"6 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-07-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"13\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2008 IEEE Radio Frequency Integrated Circuits Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RFIC.2008.4561406\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 IEEE Radio Frequency Integrated Circuits Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RFIC.2008.4561406","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 13

摘要

用于WCDMA应用的功率放大器必须在低功率和全功率下都提供具有竞争力的功率效率。本文提出了一种从三种功率状态在宽功率频带内获得高PAE性能的新方法。它使用一种新颖的BiHEMT工艺将InGaP/GaAs HBT技术与InGaAs/AlGaAs E/D-Mode pHEMT协同集成到一个工艺中。不需要偏置参考电压。典型的超低功率模式静态电流为5毫安。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Efficient three-state WCDMA PA integrated with high-performance BiHEMT HBT / E-D pHEMT process

Power amplifiers for WCDMA applications must provide competitive power efficiency at low power levels as well as at full power. This paper presents a novel approach to obtain high PAE performance over a wide power band from three power states. It uses a novel BiHEMT process to co-integrate InGaP/GaAs HBT technology with InGaAs/AlGaAs E/D-Mode pHEMT into a single process. No bias reference voltage is required. Typical ultra-low power mode quiescent current is 5 mA.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2008 IEEE Radio Frequency Integrated Circuits Symposium

自引率

0.00%

发文量