深水平对AlInAs/GalnAs/InP hfet的影响

Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362) Pub Date : 1999-05-16 DOI:10.1109/ICIPRM.1999.773739

A. Souifi, B. Georgescu, G. Brémond, M. Py, J. Decobert, G. Post, G. Guillot

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引用次数: 2

摘要

这项工作的目的是展示在AlInAs/GaInAs/InP复合沟道hfet的特性中经常观察到的一些寄生现象，如结效应或低频噪声，是如何与深能级相关的。利用深能级瞬态光谱(DLTS)、电流瞬态光谱(CTS)、漏极滞后(DL)和低频噪声(LFN)测量对hfet进行了表征。为了研究缺陷的光学性质，还记录了器件在单色光激发下的输出特性。主要的陷阱与AlInAs层有关，被称为E3。结果表明，在室温下，E3产生了较强的生成复合噪声。这个陷阱也有助于一个强大的输出电导变化。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Influence of deep levels in AlInAs/GalnAs/InP HFETs

The aim of this work is to show how some parasitic phenomena such as kink effect or low frequency noise often observed in the characteristics of AlInAs/GaInAs/InP composite channel HFETs can be correlated with deep levels. HFETs have been characterized using deep level transient spectroscopy (DLTS), current transient spectroscopy (CTS), drain lag (DL), and low frequency noise (LFN) measurements. Output characteristics of the devices have also been recorded under monochromatic optical excitation in order to study the optical properties of the defects. The main trap is related to the AlInAs layers and identified as E3. It is shown that E3 is responsible for a strong generation-recombination noise at room temperature. This trap also contributes to a strong output conductance variation.

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Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)

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