高k介电体对x射线和γ射线辐照的辐射响应

2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits Pub Date : 2009-07-06 DOI:10.1109/IPFA.2009.5232565

C.Z. Zhao, M. Werner, S. Taylor, P. Chalker, R. Potter, J. Gaskell

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引用次数: 5

摘要

采用Fe55 x射线源和Cs137 γ射线源对HfO2、ZrO2、LaAlO3和NdAlO3薄膜的辐照降解进行了研究和比较。总剂量为100krad的x射线照射后，这些薄膜的VFB发生负位移，而相同剂量的γ射线照射后，VFB发生正位移。

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High-k dielectrics' radiation response to X-ray and γ-ray exposure

Radiation-induced degradation of HfO2, ZrO2, LaAlO3, and NdAlO3 thin films was studied and compared based on a Fe⁵⁵ X-ray source and Cs¹³⁷ γ-ray source. After the X-ray exposure of a total dose of 100krad, negative VFB shifts were observed in these thin films, whereas after the γ-ray exposures of the same dose, positive VFB shifts was observed.

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2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits

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