Z. Chbili, K. Cheung, P. Campbell, J. Suehle, D. Ioannou, S. Ryu, A. Lelis
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Unusual bias temperature instability in SiC DMOSFET
We observe an unusual instability in the SiC DMOSFET transistor characteristics. From a series of bias conditions at elevated temperatures, we conclude that a high density of hole traps in the oxide near the SiO2/SiC interface are responsible.
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