基于主成分分析的GaN晶体管实时健康监测

F. Chalvin, Y. Miyamae, Yoshiaki Oku, K. Nakahara
{"title":"基于主成分分析的GaN晶体管实时健康监测","authors":"F. Chalvin, Y. Miyamae, Yoshiaki Oku, K. Nakahara","doi":"10.1109/ISSM55802.2022.10026977","DOIUrl":null,"url":null,"abstract":"Adoption of next generation semiconductors is still low, partly due to limited knowledge from the reliability point of view. To help solving this problem we introduce a way to track transistor degradation in real time using PCA analysis. By using this method, it is possible to detect when a transistor is no longer operating nominally from easily obtained voltage measurements.","PeriodicalId":130513,"journal":{"name":"2022 International Symposium on Semiconductor Manufacturing (ISSM)","volume":"329 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-12-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Principal Component Analysis Based GaN Transistor Live Health Monitoring\",\"authors\":\"F. Chalvin, Y. Miyamae, Yoshiaki Oku, K. Nakahara\",\"doi\":\"10.1109/ISSM55802.2022.10026977\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Adoption of next generation semiconductors is still low, partly due to limited knowledge from the reliability point of view. To help solving this problem we introduce a way to track transistor degradation in real time using PCA analysis. By using this method, it is possible to detect when a transistor is no longer operating nominally from easily obtained voltage measurements.\",\"PeriodicalId\":130513,\"journal\":{\"name\":\"2022 International Symposium on Semiconductor Manufacturing (ISSM)\",\"volume\":\"329 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-12-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2022 International Symposium on Semiconductor Manufacturing (ISSM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISSM55802.2022.10026977\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 International Symposium on Semiconductor Manufacturing (ISSM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISSM55802.2022.10026977","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

下一代半导体的采用率仍然很低,部分原因是从可靠性的角度来看,知识有限。为了帮助解决这个问题,我们引入了一种使用PCA分析实时跟踪晶体管退化的方法。通过使用这种方法,可以通过容易获得的电压测量来检测晶体管何时不再正常工作。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Principal Component Analysis Based GaN Transistor Live Health Monitoring
Adoption of next generation semiconductors is still low, partly due to limited knowledge from the reliability point of view. To help solving this problem we introduce a way to track transistor degradation in real time using PCA analysis. By using this method, it is possible to detect when a transistor is no longer operating nominally from easily obtained voltage measurements.
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