{"title":"WBG SiC, GaN和高端Si功率开关技术的特定应用权衡","authors":"R. Rupp, T. Laska, O. Haberlen, M. Treu","doi":"10.1109/IEDM.2014.7046965","DOIUrl":null,"url":null,"abstract":"There is an increasing choice of power switches in the 600V to 1700V range for the application engineers. Besides the well-established Si SJ (Super Junction) MOSFETs and IGBTs now also silicon carbide (SiC) and latest gallium nitride (GaN) power switches are available for new designs. Complete new system optimizations are possible driven by totally different trade off options e.g. between static and dynamic losses and their temperature dependencies. In this paper we explain these trade-offs for the different device types and show the consequences based on some prominent sample applications.","PeriodicalId":309325,"journal":{"name":"2014 IEEE International Electron Devices Meeting","volume":"16 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"32","resultStr":"{\"title\":\"Application specific trade-offs for WBG SiC, GaN and high end Si power switch technologies\",\"authors\":\"R. Rupp, T. Laska, O. Haberlen, M. Treu\",\"doi\":\"10.1109/IEDM.2014.7046965\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"There is an increasing choice of power switches in the 600V to 1700V range for the application engineers. Besides the well-established Si SJ (Super Junction) MOSFETs and IGBTs now also silicon carbide (SiC) and latest gallium nitride (GaN) power switches are available for new designs. Complete new system optimizations are possible driven by totally different trade off options e.g. between static and dynamic losses and their temperature dependencies. In this paper we explain these trade-offs for the different device types and show the consequences based on some prominent sample applications.\",\"PeriodicalId\":309325,\"journal\":{\"name\":\"2014 IEEE International Electron Devices Meeting\",\"volume\":\"16 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"32\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 IEEE International Electron Devices Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.2014.7046965\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 IEEE International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2014.7046965","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Application specific trade-offs for WBG SiC, GaN and high end Si power switch technologies
There is an increasing choice of power switches in the 600V to 1700V range for the application engineers. Besides the well-established Si SJ (Super Junction) MOSFETs and IGBTs now also silicon carbide (SiC) and latest gallium nitride (GaN) power switches are available for new designs. Complete new system optimizations are possible driven by totally different trade off options e.g. between static and dynamic losses and their temperature dependencies. In this paper we explain these trade-offs for the different device types and show the consequences based on some prominent sample applications.
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