具有片上快速横向动量识别能力的65nm像素读出专用集成电路MPA原型的表征。

D. Ceresa, M. Haranko, K. Kloukinas, J. Kapłon, Alessandro Caratelli, D. Giovinazzo, J. Murdzek, S. Scarfi, J. Clercq
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引用次数: 6

摘要

全尺寸、全功能Macro Pixel ASIC的第一个原型已经在采用耐辐射技术的65纳米技术中生产出来。它是为CMS外部跟踪器探测器的第二阶段升级设计的像素读出ASIC。它具有新颖的片上粒子识别功能,允许以40 MHz的速率实时读取高横向动量粒子的事件驱动。该数据流补充了一个零抑制触发读出数据路径,用于以1mhz的最大速率读出完整事件。这篇文章介绍了从硅原型中获得的功能和性能评估结果。在TWEPP2018粒子物理电子学专题研讨会上介绍了MPA原型,这是一款具有片上快速横向动量识别能力的65 nm像素读出ASIC。Davide Ceresa*a†,Alessandro Caratelliab†,Jarne Theo De Clercqc, Dena Giovinazzod, Mykyta Harankoe, Jan Kaplona, Kostas Kloukinasa, Jan Murdzeka, Simone Scarfìab代表CMS Tracker Group。位于瑞士日内瓦的欧洲核子研究组织。b微电子系统实验室(LSM), École洛桑理工学院(EPFL),洛桑,瑞士。c布鲁塞尔自由大学,比利时布鲁塞尔。d加州大学圣克鲁兹分校,加州,美国e德国电子同步加速器,德国汉堡。E-mail: Davide.Ceresa@cern.ch, Alessandro.Caratelli@epfl.ch全尺寸,全功能Macro Pixel ASIC的第一个原型已经在采用耐辐射技术的65纳米技术中生产出来。它是为CMS外部跟踪器探测器的第二阶段升级设计的像素读出ASIC。它具有新颖的片上粒子识别功能,允许以40 MHz的速率实时读取高横向动量粒子的事件驱动。该数据流补充了一个零抑制触发读出数据路径,用于以1mhz的最大速率读出完整事件。这篇文章介绍了从硅原型中获得的功能和性能评估结果。2018年9月17日至21日,比利时鲁汶大学,比利时安特卫普校区†主要作者©根据知识共享署名-非商业性-非衍生品4.0国际许可协议(CC by - nc - nd 4.0)的条款,作者拥有版权。https://pos.sissa.it/ MPA原型Davide Ceresa表征
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Characterization of the MPA prototype, a 65 nm pixel readout ASIC with on-chip quick transverse momentum discrimination capabilities.
The first prototype of the full-size, full-functionality Macro Pixel ASIC has been produced in a 65 nm technology employing radiation tolerant techniques. It is a pixel readout ASIC designed for the Phase2 upgrade of the CMS Outer Tracker detector. It features novel on-chip particle discrimination capabilities allowing for real-time event-driven readout of high transverse momentum particles at a 40 MHz rate. This data flow is complemented with a zero suppressed triggered readout data path for the readout of full events at a maximum rate of 1 MHz. This contribution presents the functional and performance evaluation results obtained from silicon prototypes. Presented at TWEPP2018 Topical Workshop on Electronics for Particle Physics Characterization of the MPA prototype, a 65 nm pixel readout ASIC with on-chip quick transverse momentum discrimination capabilities. Davide Ceresa*a†, Alessandro Caratelliab†, Jarne Theo De Clercqc, Dena Giovinazzod , Mykyta Harankoe, Jan Kaplona, Kostas Kloukinasa, Jan Murdzeka, Simone Scarfìab on behalf of the CMS Tracker Group. a European Organization for Nuclear Research (CERN), Geneva, Switzerland. b Microelectronic System Laboratory (LSM), École polytechnique fédérale de Lausanne (EPFL), Lausanne, Switzerland. c Vrije Universiteit Brussel, Brussel, Belgium. d UCSC, Santa Cruz, California, USA. e Deutsches Elektronen-Synchrotron, Hamburg, Germany. E-mail: Davide.Ceresa@cern.ch, Alessandro.Caratelli@epfl.ch The first prototype of the full-size, full-functionality Macro Pixel ASIC has been produced in a 65 nm technology employing radiation tolerant techniques. It is a pixel readout ASIC designed for the Phase-2 upgrade of the CMS Outer Tracker detector. It features novel on-chip particle discrimination capabilities allowing for real-time event-driven readout of high transverse momentum particles at a 40 MHz rate. This data flow is complemented with a zero suppressed triggered readout data path for the readout of full events at a maximum rate of 1 MHz. This contribution presents the functional and performance evaluation results obtained from silicon prototypes. Topical Workshop on Electronics for Particle Physics 17 21 September 2018, KU Leuven Campus Carolus, Antwerpen, Belgium *Speaker. †Main authors © Copyright owned by the author(s) under the terms of the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License (CC BY-NC-ND 4.0). https://pos.sissa.it/ Characterization of the MPA prototype Davide Ceresa
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