三孔ETOX细胞基板热电子注入自收敛编程和擦除收紧新方法

1999 International Symposium on VLSI Technology, Systems, and Applications. Proceedings of Technical Papers. (Cat. No.99TH8453) Pub Date : 1999-06-08 DOI:10.1109/VTSA.1999.786034

M. Chi, Chih-Ming Chen, C. Hung, Yu-Hsiung Wang

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引用次数: 8

摘要

提出了一种基于衬底热电子注入的三孔ETOX细胞自收敛编程新方法。编程效率比通道热电子(CHE)注入至少高100倍。编程后的单元阈值电压(V/sub t/)具有自收敛性饱和。SHE重新编程可以在擦除后收紧Vt扩散。NOR阵列架构为每列编写了单独的p-井，因此可以实现单位程序和擦除操作。采用新型NOR阵列的三孔ETOX单元既可以作为完整的EEPROM，也可以作为闪存。

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A new self-convergent programming and erase tightening by substrate-hot-electron injection for ETOX cells in triple-well

A new self-convergent programming technique for ETOX cells fabricated in a triple-well process is proposed using substrate hot-electron (SHE) injection. The programming efficiency is at least 100X higher than channel-hot-electron (CHE) injection. The cell threshold voltage (V/sub t/) after programming saturates with self-convergence. The SHE re-programming can tighten the Vt spread after erase. The NOR array architecture is codified with individual p-wells for each column so that it is possible to implement single-bit program and erase operations. The ETOX cells in triple-well with the new NOR array can perform as a full EEPROM as well as a flash memory.

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1999 International Symposium on VLSI Technology, Systems, and Applications. Proceedings of Technical Papers. (Cat. No.99TH8453)

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