{"title":"用于太赫兹信号产生的GaN - Gunn二极管","authors":"E. Alekseev, D. Pavlidis","doi":"10.1109/MWSYM.2000.862354","DOIUrl":null,"url":null,"abstract":"The frequency and power capability of GaN-based Gunn diodes are evaluated using transient hydrodynamic simulations. GaN Gunn oscillators with 2 /spl mu/m-thick GaN Gunn diodes are predicted to have a fundamental frequency of 148-162 GHz and power density of >10/sup 5/ W/cm/sup 2/. Due to their high frequency and power characteristics, applications of these devices are envisaged for THz signal generation.","PeriodicalId":149404,"journal":{"name":"2000 IEEE MTT-S International Microwave Symposium Digest (Cat. No.00CH37017)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2000-06-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"31","resultStr":"{\"title\":\"GaN Gunn diodes for THz signal generation\",\"authors\":\"E. Alekseev, D. Pavlidis\",\"doi\":\"10.1109/MWSYM.2000.862354\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The frequency and power capability of GaN-based Gunn diodes are evaluated using transient hydrodynamic simulations. GaN Gunn oscillators with 2 /spl mu/m-thick GaN Gunn diodes are predicted to have a fundamental frequency of 148-162 GHz and power density of >10/sup 5/ W/cm/sup 2/. Due to their high frequency and power characteristics, applications of these devices are envisaged for THz signal generation.\",\"PeriodicalId\":149404,\"journal\":{\"name\":\"2000 IEEE MTT-S International Microwave Symposium Digest (Cat. No.00CH37017)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-06-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"31\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2000 IEEE MTT-S International Microwave Symposium Digest (Cat. No.00CH37017)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MWSYM.2000.862354\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2000 IEEE MTT-S International Microwave Symposium Digest (Cat. No.00CH37017)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.2000.862354","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The frequency and power capability of GaN-based Gunn diodes are evaluated using transient hydrodynamic simulations. GaN Gunn oscillators with 2 /spl mu/m-thick GaN Gunn diodes are predicted to have a fundamental frequency of 148-162 GHz and power density of >10/sup 5/ W/cm/sup 2/. Due to their high frequency and power characteristics, applications of these devices are envisaged for THz signal generation.
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