SiC MOSFET高温(>1400℃)快速热氧化的热可控性

2006 14th IEEE International Conference on Advanced Thermal Processing of Semiconductors Pub Date : 2006-10-01 DOI:10.1109/RTP.2006.367994

S. Ogata, T. Oka, K. Tsuda, T. Nakayama, R. Kosugi

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摘要

AIST研究组开发了SiC MOSFET冷壁氧化炉极高温(>1400℃)NO钝化有效退火方法。针对这一新工艺，采用数值计算方法对反应器内的热分布和化学反应进行了研究。通过对实验过程和模拟结果的比较，提出了氮原子在晶圆上的空间分布是SiO2/SiC界面氮化过程的关键技术

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Thermal Controllability of High Temperature (>1400°C) Rapid Thermal Oxidation for SiC MOSFET

Effective NO passivation annealing for SiC MOSFET with extreme high temperature (>1400degC) at cold-wall oxidation furnace has been developed by AIST group. For this newly developed process, the thermal distribution and chemical reaction in the reactor are studied by computational numerical analysis. By comparing the experimental process and the simulated results, the spatial distribution of N atom on the wafer is suggested to be the key technology of nitridation process of SiO2/SiC interface

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2006 14th IEEE International Conference on Advanced Thermal Processing of Semiconductors

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