{"title":"一个完整和一致的电/热HBT模型","authors":"C. McAndrew","doi":"10.1109/BIPOL.1992.274051","DOIUrl":null,"url":null,"abstract":"GaAs heterojunction bipolar transistor (HBT) circuits with significant self-heating must be analyzed using coupled electrical and thermal simulation. The author presents a complete, consistent, coupled electrical/thermal model for such devices. The model is applicable to DC, AC, transient large-signal steady-state, noise and stability analyses. Examples of the effects of self-heating on device performance are given. The coupled model is necessary to model GaAs HBT behavior properly when devices are biased at high power dissipation.<<ETX>>","PeriodicalId":286222,"journal":{"name":"Proceedings of the 1992 Bipolar/BiCMOS Circuits and Technology Meeting","volume":"32 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1992-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"31","resultStr":"{\"title\":\"A complete and consistent electrical/thermal HBT model\",\"authors\":\"C. McAndrew\",\"doi\":\"10.1109/BIPOL.1992.274051\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"GaAs heterojunction bipolar transistor (HBT) circuits with significant self-heating must be analyzed using coupled electrical and thermal simulation. The author presents a complete, consistent, coupled electrical/thermal model for such devices. The model is applicable to DC, AC, transient large-signal steady-state, noise and stability analyses. Examples of the effects of self-heating on device performance are given. The coupled model is necessary to model GaAs HBT behavior properly when devices are biased at high power dissipation.<<ETX>>\",\"PeriodicalId\":286222,\"journal\":{\"name\":\"Proceedings of the 1992 Bipolar/BiCMOS Circuits and Technology Meeting\",\"volume\":\"32 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1992-10-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"31\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the 1992 Bipolar/BiCMOS Circuits and Technology Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/BIPOL.1992.274051\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 1992 Bipolar/BiCMOS Circuits and Technology Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/BIPOL.1992.274051","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A complete and consistent electrical/thermal HBT model
GaAs heterojunction bipolar transistor (HBT) circuits with significant self-heating must be analyzed using coupled electrical and thermal simulation. The author presents a complete, consistent, coupled electrical/thermal model for such devices. The model is applicable to DC, AC, transient large-signal steady-state, noise and stability analyses. Examples of the effects of self-heating on device performance are given. The coupled model is necessary to model GaAs HBT behavior properly when devices are biased at high power dissipation.<>
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