{"title":"180nm高温SOI CMOS生产工艺晶体管及电路参数变化的初步研究","authors":"L. Sambursky, M. Ismail-Zade, N. Blokhina","doi":"10.1109/MWENT47943.2020.9067447","DOIUrl":null,"url":null,"abstract":"In this paper, we do an early study of circuit parameter variation for temperature-resistant SOI CMOS production technology on the examples of several standard circuit fragments. Circuits electrical characteristics are simulated at several values of temperature (in the range +27…+300 °C) and with account for MOSFET parameter mismatch figures derived from measurement data. The method involving a library of corner models provides a reasonable estimate of circuits behavior scatter due to the simultaneous influence of very high temperature and production process variability.","PeriodicalId":122716,"journal":{"name":"2020 Moscow Workshop on Electronic and Networking Technologies (MWENT)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Early Study of Transistor and Circuit Parameter Variation for 180 nm High-Temperature SOI CMOS Production Technology\",\"authors\":\"L. Sambursky, M. Ismail-Zade, N. Blokhina\",\"doi\":\"10.1109/MWENT47943.2020.9067447\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, we do an early study of circuit parameter variation for temperature-resistant SOI CMOS production technology on the examples of several standard circuit fragments. Circuits electrical characteristics are simulated at several values of temperature (in the range +27…+300 °C) and with account for MOSFET parameter mismatch figures derived from measurement data. The method involving a library of corner models provides a reasonable estimate of circuits behavior scatter due to the simultaneous influence of very high temperature and production process variability.\",\"PeriodicalId\":122716,\"journal\":{\"name\":\"2020 Moscow Workshop on Electronic and Networking Technologies (MWENT)\",\"volume\":\"20 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-03-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2020 Moscow Workshop on Electronic and Networking Technologies (MWENT)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MWENT47943.2020.9067447\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 Moscow Workshop on Electronic and Networking Technologies (MWENT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWENT47943.2020.9067447","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Early Study of Transistor and Circuit Parameter Variation for 180 nm High-Temperature SOI CMOS Production Technology
In this paper, we do an early study of circuit parameter variation for temperature-resistant SOI CMOS production technology on the examples of several standard circuit fragments. Circuits electrical characteristics are simulated at several values of temperature (in the range +27…+300 °C) and with account for MOSFET parameter mismatch figures derived from measurement data. The method involving a library of corner models provides a reasonable estimate of circuits behavior scatter due to the simultaneous influence of very high temperature and production process variability.
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