用于DC/DC变换器应用的高密度超低R/sub / 30伏n沟道场效应管

11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312) Pub Date : 1999-05-26 DOI:10.1109/ISPSD.1999.764123

R. Sodhi, R. Malik, D. Asselanis, D. Kinzer

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引用次数: 10

摘要

本文提出了一种用于DC/DC变换器的高密度沟槽MOSFET的超低R/sub /设计。基准低比导通电阻为26 m/spl ω /。mm/sup 2/在4.5 V栅极偏置。利用远程接触特征来获得如此高的通道密度和相应的通道电导。电路效率高达89%，是目前业界最高的。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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High-density ultra-low R/sub dson/ 30 volt N-channel trench FETs for DC/DC converter applications

This paper presents a new high-density trench MOSFET design with ultra-low R/sub dson/ for DC/DC converter applications. A benchmark low specific on-resistance of 26 m/spl Omega/.mm/sup 2/ at 4.5 V gate bias is reported. A remote contact feature is utilized to obtain such high channel density and corresponding channel conductance. In-circuit efficiency as high as 89% is obtained, which is the best obtained in the industry to date.

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11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312)

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