MoSe2场效应管中由通道动力学控制的场驱动性能不可靠性

2023 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2023-03-01 DOI:10.1109/IRPS48203.2023.10117743

Utpreksh Patbhaje, Rupali Verma, J. Kumar, Ansh, M. Shrivastava

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引用次数: 0

摘要

MoSe2是一种极好的双极性二维材料，为未来的电子产品提供了一个很好的平台，但缺乏对电应力下操作的分析。这项工作的重点是在MoSe2 fet中观察到的参数漂移，这是由于通道随时间和施加场的演变而引起的，在此期间，捕获的应力电流显示出增量趋势，即使在1000秒后也不会饱和。ID(max)提高42%，VT位移提高380%，SS提高30%，机动性增加33%，这些都是运行中不可靠的场景。这归因于沟道中持续的应变，表现为沟道中有序的改善，这表明在MoSe2 fet中接触区域容易受到性能下降的影响。

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Unveiling Field Driven Performance Unreliabilities Governed by Channel Dynamics in MoSe2 FETs

MoSe2 is a wonderful ambipolar 2D material that provides a great platform for future electronics but lacks analysis for operation under electrical stress. This work focuses on parameter drifts observed in MoSe2 FETs due to evolution of channel as function of time and applied field during which captured stress current shows increment trends that does not saturate even after 1000 seconds of operation. ID(max) improvement of 42%, VT shifts by 380%, SS improvement by 30% and mobility increment by 33% presents unreliable scenarios in operation. This has been attributed to persistent strain in channel that manifests as improved ordering in channel that points to contact region being susceptible to performance degradation in MoSe2 FETs.

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2023 IEEE International Reliability Physics Symposium (IRPS)

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