电子衍射的晶体管

Proceedings., IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, Pub Date : 1989-08-07 DOI:10.1109/CORNEL.1989.79841

G. Bernstein, A. Kriman

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引用次数: 0

摘要

介绍了量子衍射场效应晶体管(quadfet)的设计、制造和应用。四场效应晶体管将使弗劳恩霍夫衍射得到证明和利用。这些器件是高电子迁移率晶体管(hemt)，其中光源和特殊形成的漏极分别执行类似光学系统的光源和显示屏的功能。给出了四场效应晶体管的实验结果

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Electron-diffraction transistors

The design, fabrication, and applications of QUADFETs (quantum diffraction field effect transistors) are described. The QUADFETs will enable Fraunhofer diffraction to be demonstrated and exploited. These devices are high-electron-mobility transistors (HEMTs), in which the source and a specially formed drain perform the functions of the light source and viewing screen of an analogous optical system, respectively. Experimental results on QUADFETs are presented.<>

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Proceedings., IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits,

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