{"title":"一、联系","authors":"A. Dostanko, V. Ivkin","doi":"10.1525/9780520908451-004","DOIUrl":null,"url":null,"abstract":"the phosphorus into the oxide results in a negligible threshold voL.-tage growth and transconductance reductioniLobility degradation ina IOSPT channel of a split drain—contact transistor has been tes—ted by means of an in—situ Hall current method. It is shown thatdoping oxide with phosphorus leads to a negligible reduction 0±'","PeriodicalId":205951,"journal":{"name":"Two Churches","volume":"12 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-12-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"I. THE CONNECTION\",\"authors\":\"A. Dostanko, V. Ivkin\",\"doi\":\"10.1525/9780520908451-004\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"the phosphorus into the oxide results in a negligible threshold voL.-tage growth and transconductance reductioniLobility degradation ina IOSPT channel of a split drain—contact transistor has been tes—ted by means of an in—situ Hall current method. It is shown thatdoping oxide with phosphorus leads to a negligible reduction 0±'\",\"PeriodicalId\":205951,\"journal\":{\"name\":\"Two Churches\",\"volume\":\"12 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-12-31\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Two Churches\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1525/9780520908451-004\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Two Churches","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1525/9780520908451-004","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
the phosphorus into the oxide results in a negligible threshold voL.-tage growth and transconductance reductioniLobility degradation ina IOSPT channel of a split drain—contact transistor has been tes—ted by means of an in—situ Hall current method. It is shown thatdoping oxide with phosphorus leads to a negligible reduction 0±'
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