A. Nakajima, M. H. Dhyani, E. Narayanan, Y. Sumida, H. Kawai
{"title":"基于氮化镓的700V以上超高压场效应管采用极化结概念","authors":"A. Nakajima, M. H. Dhyani, E. Narayanan, Y. Sumida, H. Kawai","doi":"10.1109/ISPSD.2011.5890845","DOIUrl":null,"url":null,"abstract":"GaN Super Heterojunction Field Effect Transistors (Super HFETs) based on the polarization junction (PJ) concept are demonstrated on Sapphire substrates. These Super HFETs were fabricated from a GaN/Al<inf>0.23</inf>Ga<inf>0.77</inf>N/GaN hetero structure with 2D hole and electron gas densities of 1.1×10<sup>13</sup> and 9.7×10<sup>12</sup> cm<sup>−2</sup> at the respective hetero-interfaces. The Super HFETs show breakdown voltage above 700 V with on-resistances of 15 Ω·mm. In addition, the super HFETs have inherent body diodes and its reverse conducting characteristics are demonstrated.","PeriodicalId":132504,"journal":{"name":"2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs","volume":"29 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"15","resultStr":"{\"title\":\"GaN based Super HFETs over 700V using the polarization junction concept\",\"authors\":\"A. Nakajima, M. H. Dhyani, E. Narayanan, Y. Sumida, H. Kawai\",\"doi\":\"10.1109/ISPSD.2011.5890845\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"GaN Super Heterojunction Field Effect Transistors (Super HFETs) based on the polarization junction (PJ) concept are demonstrated on Sapphire substrates. These Super HFETs were fabricated from a GaN/Al<inf>0.23</inf>Ga<inf>0.77</inf>N/GaN hetero structure with 2D hole and electron gas densities of 1.1×10<sup>13</sup> and 9.7×10<sup>12</sup> cm<sup>−2</sup> at the respective hetero-interfaces. The Super HFETs show breakdown voltage above 700 V with on-resistances of 15 Ω·mm. In addition, the super HFETs have inherent body diodes and its reverse conducting characteristics are demonstrated.\",\"PeriodicalId\":132504,\"journal\":{\"name\":\"2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs\",\"volume\":\"29 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2011-05-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"15\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISPSD.2011.5890845\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.2011.5890845","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
GaN based Super HFETs over 700V using the polarization junction concept
GaN Super Heterojunction Field Effect Transistors (Super HFETs) based on the polarization junction (PJ) concept are demonstrated on Sapphire substrates. These Super HFETs were fabricated from a GaN/Al0.23Ga0.77N/GaN hetero structure with 2D hole and electron gas densities of 1.1×1013 and 9.7×1012 cm−2 at the respective hetero-interfaces. The Super HFETs show breakdown voltage above 700 V with on-resistances of 15 Ω·mm. In addition, the super HFETs have inherent body diodes and its reverse conducting characteristics are demonstrated.
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