高速低成本的射频应用BiCMOS采用轮廓工程

1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105) Pub Date : 1998-10-21 DOI:10.1109/ICSICT.1998.785845

G. Minghui, Zhao Haijun, A. Bandyopadhyay, C. Jiang, Foo Pang Dow

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引用次数: 0

摘要

本文介绍了一种低成本、CMOS代工兼容的1.9 GHz射频应用BiCMOS工艺。它保留了三井单聚方法的简单特征，同时通过采用新颖的c井剖面工程来降低基极和集电极串联电阻，实现了更高的f/sub T/。

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High speed low cost BiCMOS for RF applications using profile engineering

This paper describes a low cost, CMOS foundry compatible BiCMOS process for 1.9 GHz RF applications. It keeps the simple feature of the triple-well single-poly approach while achieving much higher f/sub T/ by utilizing novel c-well profile engineering to reduce base and collector series resistance.

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1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105)

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