Two-photon process in F treated AlGaN/GaN heterojunction HEMT device

In this paper, we find a new method for deep energy level detection of F within AlGaN/GaN heterojunction HEMT device, which successfully detected the energy level of F elements in AlGaN/GaN heterojunctions by a two-photon process combined with polar organic liquids treatment techniques. Two lights illuminated the device surface at the same time. The rapid increase of Ids can be observed only when the wavelengths of light corresponding to the F energy level. Thus, the energy level of the F element in AlGaN/GaN heterojunction open-gate HEMT devices was successfully detected. This method provides a new idea for the deep energy level detection of III-V compound semiconductor devices.