{"title":"用B2O3在CO2激光中掺杂Si层是提高安全系统中探测器灵敏度的有效方法","authors":"W. Proszak, O. Bonchyk, S. Kiyak, Zenon Gotral","doi":"10.1117/12.438441","DOIUrl":null,"url":null,"abstract":"This paper presents results of researches related with solid state doping of Si layers with use CO2 laser irradiation and B203 dopant. Unique properties of laser doping process let us create 10-100 nm doped layers of repeatable parameters.","PeriodicalId":156625,"journal":{"name":"Systems of Optical Security","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2001-08-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"CO2 laser doping of Si layers with use of B2O3 as an effective procedure for increasing the sensitivity of detectors in security systems\",\"authors\":\"W. Proszak, O. Bonchyk, S. Kiyak, Zenon Gotral\",\"doi\":\"10.1117/12.438441\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents results of researches related with solid state doping of Si layers with use CO2 laser irradiation and B203 dopant. Unique properties of laser doping process let us create 10-100 nm doped layers of repeatable parameters.\",\"PeriodicalId\":156625,\"journal\":{\"name\":\"Systems of Optical Security\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2001-08-24\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Systems of Optical Security\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1117/12.438441\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Systems of Optical Security","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1117/12.438441","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
CO2 laser doping of Si layers with use of B2O3 as an effective procedure for increasing the sensitivity of detectors in security systems
This paper presents results of researches related with solid state doping of Si layers with use CO2 laser irradiation and B203 dopant. Unique properties of laser doping process let us create 10-100 nm doped layers of repeatable parameters.