{"title":"一种制备高纵横面x射线掩模的新方法","authors":"S.X. Kang, H. Kang, A. Grilli, A. Arco","doi":"10.1109/ICSICT.1995.503385","DOIUrl":null,"url":null,"abstract":"High aspect X-ray mask has been fabricated using electron beam lithography and x-ray lithography. Results show that 0.1 /spl mu/m patterns with aspect up to 12 were successfully obtained. Processes were described.","PeriodicalId":286176,"journal":{"name":"Proceedings of 4th International Conference on Solid-State and IC Technology","volume":"21 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-10-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A new method for high aspect X-ray mask fabrication\",\"authors\":\"S.X. Kang, H. Kang, A. Grilli, A. Arco\",\"doi\":\"10.1109/ICSICT.1995.503385\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"High aspect X-ray mask has been fabricated using electron beam lithography and x-ray lithography. Results show that 0.1 /spl mu/m patterns with aspect up to 12 were successfully obtained. Processes were described.\",\"PeriodicalId\":286176,\"journal\":{\"name\":\"Proceedings of 4th International Conference on Solid-State and IC Technology\",\"volume\":\"21 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-10-24\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of 4th International Conference on Solid-State and IC Technology\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICSICT.1995.503385\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 4th International Conference on Solid-State and IC Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICSICT.1995.503385","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A new method for high aspect X-ray mask fabrication
High aspect X-ray mask has been fabricated using electron beam lithography and x-ray lithography. Results show that 0.1 /spl mu/m patterns with aspect up to 12 were successfully obtained. Processes were described.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
