{"title":"电化学金属化rram在SET过程中动态开关特性的动力学蒙特卡罗研究","authors":"Feng Pan, V. Subramanian","doi":"10.1109/SISPAD.2010.5604584","DOIUrl":null,"url":null,"abstract":"In this paper, a simulation process based on Kinetic Monte Carlo (KMC) for an electrochemical metallization (ECM) resistive RAM (RRAM) is demonstrated. This simulation tool can investigate all the major dynamics properties of such devices. In particular, the voltage sweep rate dependent I–V characteristics, the variations of SET voltage, writing speed, on-state resistance, filament overgrowth phenomena and the effect of material properties are studied.","PeriodicalId":331098,"journal":{"name":"2010 International Conference on Simulation of Semiconductor Processes and Devices","volume":"9 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"14","resultStr":"{\"title\":\"A Kinetic Monte Carlo study on the dynamic switching properties of electrochemical metallization RRAMs during the SET process\",\"authors\":\"Feng Pan, V. Subramanian\",\"doi\":\"10.1109/SISPAD.2010.5604584\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, a simulation process based on Kinetic Monte Carlo (KMC) for an electrochemical metallization (ECM) resistive RAM (RRAM) is demonstrated. This simulation tool can investigate all the major dynamics properties of such devices. In particular, the voltage sweep rate dependent I–V characteristics, the variations of SET voltage, writing speed, on-state resistance, filament overgrowth phenomena and the effect of material properties are studied.\",\"PeriodicalId\":331098,\"journal\":{\"name\":\"2010 International Conference on Simulation of Semiconductor Processes and Devices\",\"volume\":\"9 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-10-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"14\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2010 International Conference on Simulation of Semiconductor Processes and Devices\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SISPAD.2010.5604584\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 International Conference on Simulation of Semiconductor Processes and Devices","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SISPAD.2010.5604584","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A Kinetic Monte Carlo study on the dynamic switching properties of electrochemical metallization RRAMs during the SET process
In this paper, a simulation process based on Kinetic Monte Carlo (KMC) for an electrochemical metallization (ECM) resistive RAM (RRAM) is demonstrated. This simulation tool can investigate all the major dynamics properties of such devices. In particular, the voltage sweep rate dependent I–V characteristics, the variations of SET voltage, writing speed, on-state resistance, filament overgrowth phenomena and the effect of material properties are studied.
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