纳米孔离子记忆效应

M. Poggio, F. Corinto
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引用次数: 1

摘要

在过去的几年里,固态纳米孔制造的许多重大创新引发了大量新的生物物理学应用,因为使用大规模的膜材料可以达到小尺寸(5-20纳米)。这些显著的改进促进了对纳米孔内电荷扩散机制(关于离子通量)的更深入理解。将纳米孔内的物理现象(在动态激励下)联系起来,对于预测和控制离子在纳米孔内的输运具有重要意义。在这里,我们展示了一项创新的研究,基于泊松-能-普朗克(PNP)方程,推导出一个电路模型,该模型有助于设计具有特定性质的纳米孔。我们获得了分析模拟,突出了与交流外部源的局部离子浓度响应相关的夹紧迟滞电压-电流环路(即忆阻器)。通过有限差分空间离散,我们可以得到忆阻器和电导参数的推导。最后,一个空间变化的传输线与忆阻器定义在纳米孔中的输运现象。我们相信,结合纳米孔中的物理特性,本文提出的电路可以提供一个有效的工具,以更准确地预测膜中纳米孔网络的扩散。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Nanopore ionic memristive effects
In the past few years many significant innovations in the fabrication of solid-state nanopores have triggered a large number of new biophysics applications, due to the small dimension (5-20 nm) reached using a large scale of membrane materials. These significant improvements catalyzed a deeper understanding in the mechanism of charge diffusion inside nanopores (concerning the ionic flux). To correlate the physical phenomena (under dynamic excitation) inside the nanopore result highly important to easily predict and control the ionic transport throughout the nanopore. Here, we show an innovative study, based on Poisson-Nernst-Planck (PNP) equations, to derive a circuit model which is useful in designing nanopores with specific properties. We obtained analytical simulations which highlighted pinched hysteresis voltage-current loops (i.e. a memristor) related to the local ionic concentration response to AC external sources. Through finite difference space discretization, we are able to show how the memristor and the conductance parameters are derived. Finally, a space-varying transmission line with memristor defines the transport phenomena in the nanopore. We believe the combination of the electrical circuit presented here, correlated by the physics in the nanopores, can provide an effective tool to more accurately predict the diffusion in case of networks of nanopores in a membrane.
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