采用晶圆级封装技术制造的低相位噪声高q电感LC-VCO

K. Ohashi, Y. Kobayashi, H. Ito, K. Okada, H. Hatakeyama, T. Aizawa, T. Ito, R. Yamauchi, K. Masu
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引用次数: 7

摘要

本文介绍了一种采用商用晶圆级封装(WLP)技术制造的带有高q电感的CMOS压控振荡器(VCO)。提出了一种适用于高q WLP电感CMOS压控振荡器的新型拓扑结构。在1.9 GHz左右的差分模式下,WLP电感的测量Q值为40。在1.9 GHz载波频率下,偏移1mhz时相位噪声为-134.4 dBc/Hz, FoM为-193 dBc/Hz。与采用传统片上电感的压控振荡器相比,采用WLP电感的压控振荡器的相位噪声提高了6.4 dB。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A low phase noise LC-VCO with a high-Q inductor fabricated by wafer level package technology
This paper presents a CMOS voltage controlled oscillator (VCO) with a high-Q inductor fabricated by using a commercial wafer-level-package (WLP) technology. A new topology suitable for CMOS VCOs with high-Q WLP inductors is proposed. Measured Q of a WLP inductor is 40 in differential mode at around 1.9 GHz. A phase noise is -134.4 dBc/Hz at a 1 MHz offset for 1.9 GHz carrier frequency, and a FoM is -193 dBc/Hz. The VCO with the WLP inductor improves a phase noise of 6.4 dB as compared to VCOs with conventional on-chip inductors.
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