高密度3D风扇包异质集成

S. Jeng, S. M. Chen, F. Hsu, P. Lin, J. H. Wang, T. Fang, P. Kavle, Y. J. Lin
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引用次数: 4

摘要

三维(3D)扇出封装堆叠提供了新的性能水平、高密度集成和外形优势。已知好的扇出封装是堆叠的,垂直连接是通过成型区域的铜柱和焊料凸起建立的。与现有的基于tsv的3D集成电路(3DIC)技术相比,该解决方案在集成不同芯片尺寸的器件时减少了热串扰。扇出封装堆叠为数字、存储、模拟、射频(RF)和光器件的高度灵活异构集成提供了一个具有成本效益的平台。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
High density 3D fanout package for heterogeneous integration
Three-dimensional (3D) fanout package stacking offers new levels of performance, high-density integration, and form factor advantages. Known-good fanout packages are stacked, and the vertical connection is built through Cu pillars in the molding area and solder bumps. Compared to existing TSV-based 3D integrated circuits (3DIC) technology, this solution reduces thermal crosstalk when integrating devices of different die sizes. Fanout package stacking potentially provides a cost-effective platform for highly flexible heterogeneous integration of digital, memory, analog, radio-frequency (RF) and optical devices.
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