利用“快速加热”热CVD技术在铝上制备真空真空元件

2013 14th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE) Pub Date : 2013-04-14 DOI:10.1109/EUROSIME.2013.6529955

Zhaoli Gao, M. Yuen

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引用次数: 0

摘要

采用快速加热方案直接在金属基板上制备长VACTN-TIM。在低温600℃的条件下，采用传统的热气相沉积技术在Al薄膜上制备了长度超过100 μm的VACNT阵列。我们的方法允许使用标准的升空工艺制造图像化VACNT阵列，用于各种应用，如热界面材料，超级电容器场发射器件和电子互连。

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VACNT fabrication on aluminum using “fast-heating” thermal CVD

A fast-heating scheme is utilized for long VACTN-TIM fabrication directly on metal substrate. VACNT arrays with lengths of more than 100 μm were achieved on Al thin film by a conventional thermal CVD at a low temperature of 600 °C. Our methodology allows patterned VACNT array fabrication using a standard lift-off process for various applications, such as thermal interface materials, super capacitor field emission devices and electronic interconnects.

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2013 14th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)

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