T. Kusserow, R. Zamora, J. Sonksen, N. Dharmarasu, H. Hillmer, T. Nakamura, T. Hayakawa, B. Vengatesan
{"title":"基于InP/气隙法布里-普氏滤波器的可调谐光电探测器的单片集成","authors":"T. Kusserow, R. Zamora, J. Sonksen, N. Dharmarasu, H. Hillmer, T. Nakamura, T. Hayakawa, B. Vengatesan","doi":"10.1109/OMEMS.2008.4607865","DOIUrl":null,"url":null,"abstract":"We present a tunable photodetector MEMS device consisting of an InP/air-gap Fabry-Perot filter combined with a pin-photodiode structure. Epitaxial growth and advanced surface micromachining are used for the monolithic integration of both devices. Special process steps regarding detector geometry, photo current and signal quality have been investigated to assure high performance.","PeriodicalId":402931,"journal":{"name":"2008 IEEE/LEOS International Conference on Optical MEMs and Nanophotonics","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2008-08-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"Monolithic integration of a tunable photodetector based on InP/air-gap Fabry-Pérot filters\",\"authors\":\"T. Kusserow, R. Zamora, J. Sonksen, N. Dharmarasu, H. Hillmer, T. Nakamura, T. Hayakawa, B. Vengatesan\",\"doi\":\"10.1109/OMEMS.2008.4607865\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We present a tunable photodetector MEMS device consisting of an InP/air-gap Fabry-Perot filter combined with a pin-photodiode structure. Epitaxial growth and advanced surface micromachining are used for the monolithic integration of both devices. Special process steps regarding detector geometry, photo current and signal quality have been investigated to assure high performance.\",\"PeriodicalId\":402931,\"journal\":{\"name\":\"2008 IEEE/LEOS International Conference on Optical MEMs and Nanophotonics\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-08-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2008 IEEE/LEOS International Conference on Optical MEMs and Nanophotonics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/OMEMS.2008.4607865\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 IEEE/LEOS International Conference on Optical MEMs and Nanophotonics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/OMEMS.2008.4607865","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Monolithic integration of a tunable photodetector based on InP/air-gap Fabry-Pérot filters
We present a tunable photodetector MEMS device consisting of an InP/air-gap Fabry-Perot filter combined with a pin-photodiode structure. Epitaxial growth and advanced surface micromachining are used for the monolithic integration of both devices. Special process steps regarding detector geometry, photo current and signal quality have been investigated to assure high performance.