基于InP/气隙法布里-普氏滤波器的可调谐光电探测器的单片集成

T. Kusserow, R. Zamora, J. Sonksen, N. Dharmarasu, H. Hillmer, T. Nakamura, T. Hayakawa, B. Vengatesan
{"title":"基于InP/气隙法布里-普氏滤波器的可调谐光电探测器的单片集成","authors":"T. Kusserow, R. Zamora, J. Sonksen, N. Dharmarasu, H. Hillmer, T. Nakamura, T. Hayakawa, B. Vengatesan","doi":"10.1109/OMEMS.2008.4607865","DOIUrl":null,"url":null,"abstract":"We present a tunable photodetector MEMS device consisting of an InP/air-gap Fabry-Perot filter combined with a pin-photodiode structure. Epitaxial growth and advanced surface micromachining are used for the monolithic integration of both devices. Special process steps regarding detector geometry, photo current and signal quality have been investigated to assure high performance.","PeriodicalId":402931,"journal":{"name":"2008 IEEE/LEOS International Conference on Optical MEMs and Nanophotonics","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-08-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"Monolithic integration of a tunable photodetector based on InP/air-gap Fabry-Pérot filters\",\"authors\":\"T. Kusserow, R. Zamora, J. Sonksen, N. Dharmarasu, H. Hillmer, T. Nakamura, T. Hayakawa, B. Vengatesan\",\"doi\":\"10.1109/OMEMS.2008.4607865\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We present a tunable photodetector MEMS device consisting of an InP/air-gap Fabry-Perot filter combined with a pin-photodiode structure. Epitaxial growth and advanced surface micromachining are used for the monolithic integration of both devices. Special process steps regarding detector geometry, photo current and signal quality have been investigated to assure high performance.\",\"PeriodicalId\":402931,\"journal\":{\"name\":\"2008 IEEE/LEOS International Conference on Optical MEMs and Nanophotonics\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-08-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2008 IEEE/LEOS International Conference on Optical MEMs and Nanophotonics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/OMEMS.2008.4607865\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 IEEE/LEOS International Conference on Optical MEMs and Nanophotonics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/OMEMS.2008.4607865","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5

摘要

我们提出了一种由InP/气隙法布里-珀罗滤波器和针脚光电二极管结构组成的可调谐光电探测器MEMS器件。外延生长和先进的表面微加工用于两个器件的单片集成。对探测器几何形状、光电流和信号质量的特殊工艺步骤进行了研究,以确保高性能。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Monolithic integration of a tunable photodetector based on InP/air-gap Fabry-Pérot filters
We present a tunable photodetector MEMS device consisting of an InP/air-gap Fabry-Perot filter combined with a pin-photodiode structure. Epitaxial growth and advanced surface micromachining are used for the monolithic integration of both devices. Special process steps regarding detector geometry, photo current and signal quality have been investigated to assure high performance.
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