电流方向对含储层短线电迁移的影响

C. Hau-Riege, A. Marathe, Z.-S. Choi
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引用次数: 16

摘要

我们对Cu/低k标准短线构造和不同储层数量的短线构造进行了电迁移试验。我们发现,储层的存在和数量以及相对于储层的电流方向导致了电迁移性能在寿命和分布形状方面的显著差异。也就是说,在阳极(或电子吸收)线端的情况下,寿命与阴极(或电子源)线端的情况相似或略好,寿命比长线情况下长得多,甚至是不朽的。此外,阴极储层结构的分布呈现出一种滚转形状,即第一次破坏对应于较小的空洞尺寸,而第二次破坏对应于较大的空洞尺寸。我们认为这些观察结果与电迁移过程中应力发展的差异有关,这种差异将在储层存在的线端受到限制,并已通过模拟得到验证。最后,我们提出了一种为这些复杂的短线配置分配等效长度的方法,该方法表明短线效益的ldquostrengththrdquo将等同于标准短线的效益。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
The effect of current direction on the electromigration in short-lines with reservoirs
We have conducted electromigration tests on Cu/low-k standard short-line structures as well as those with varying numbers of reservoirs. We found that the presence and number of reservoirs as well as current direction relative to the reservoir led to markedly different electromigration performance in terms of lifetime and distribution shape. That is, in the case of a reservoir by the anode (or electron sink) line-end, lifetimes were similar or slightly better than the In the case of a reservoir by the cathode (or electron source) line-end, lifetimes were extremely longer than the long-line case or even immortal. Further, the distribution of the cathode reservoir structure exhibited a roll-over shape, in which the first fails corresponded to small void sizes and the later fails corresponded to larger void sizes. We believe these observations are related to the differences in stress development during electromigration, which will be constrained at the line-end at which the reservoir is present, and has been verified through simulation. Finally, we propose a method for assigning an equivalent length to these complex short-line configurations which indicates a ldquostrengthrdquo of the short-line benefit which would be equivalent to that of a standard short-line.
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