X-series approach to high density 128K and high speed 32K EPROMs

PRESENT GENERATION EPROMs have several serious limitations which restrict them to devices of low speed and moderate size'. To improve significantly EPROM density and performance, the present barriers, which include low FAMOS drive capabilities and relatively large cell configurations, have been addressed in this effort through a multipronged attack; the Xscries approach. The cell array has been reconfigured which, in combination with scaling, offers a memory of significantly higher density. The FAMOS performance has been improved through scaling and process innovation, resulting in higher cell drive without significant reduction in programmability. Circuit approaches taking advantage of updated memory architecture and performance to provide higher EPROM speeds have been adopted.