在单步湿法各向异性蚀刻中具有圆形凹角和锋利凸角的微结构

SPIE MOEMS-MEMS Pub Date : 2008-02-26 DOI:10.1117/12.765475
P. Pal, Kazuo Sato, M. Gosálvez, M. Shikida
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引用次数: 1

摘要

本文报道了一种湿法各向异性刻蚀工艺,用于在(100)-Si硅片上制造具有圆形凹角和尖锐凸角的硅MEMS结构。采用不同浓度(10、20、25 wt%)的四甲基氢氧化铵(TMAH)和少量(0.1% v/v)的非离子表面活性剂NC-200,开发了该工艺。在60°C下,在硅半球和几个硅(100)晶圆上测量了蚀刻特性。用半球面观察不同晶面的刻蚀行为。本工作的目标是尽量减少非(100)平面的蚀刻速率,从而可以轻松地实现具有圆角凹角和凸角的微结构。所提出的各向异性湿法刻蚀可用于制备不同类型的微流控通道。针对20-25 μm深度微结构的任意掩模设计,可实现单步共形刻蚀。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Microstructures with rounded concave and sharp-edged convex corners in a single step wet anisotropic etching
This paper reports a wet anisotropic etching process for the fabrication of silicon MEMS structures with rounded concave and sharp convex corners on (100)-Si wafers. The process is developed using tetramethyl ammonium hydroxide (TMAH) at different concentrations (10, 20, 25 wt%) and a small amount (0.1% v/v) of non-ionic surfactant NC-200. The etching characteristics are measured on a silicon hemisphere and several Si(100) wafers at 60 °C. The hemisphere is used to observe the etching behavior of different crystallographic planes. The present work aims at minimizing the etch rates of non-(100) planes, so that microstructures with rounded concave corners and convex corners can be realized easily. The proposed anisotropic wet etching is used for the fabrication of different kinds of microfluidic channels. Conformal etching in a single step can be realized for arbitrary mask designs targeting 20-25 μm deep microstructures.
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