Organic field effect transistor OFET optimization considering volume channel conduction mechanism

The main contribution of this paper is to highlight a new work regime of an optimised organic field effect transistor (OFET) respectively volume channel mode. If the device comprises a vertical n+p junction on insulator, the longitudinal conduction can be deviated by two gates. The carriers rejection from surface deep into the volume is limited by the metallurgical junction, via the top, bottom gates and deep contacts for source and drain. In respect with the electrodes biasing, a new work regime is defined. The conduction is allowed by a volume n-channel, for both negative gate voltages, with the advantage of interface conduction avoiding. A current density of 1.45μA/cm2 occurs in this situation for usual biasing. After the final analysis, a distinct device function is encountered - transistor with volume channel. The situation is analysed versus the traditional OFET case with neutral or accumulation channels.