用于癫痫发作预测的低功率ENG信号采集放大器

J. Alexander, M. S. Lakshmi, M. Renuga
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引用次数: 0

摘要

本文研究了一种用于癫痫发作预测的低功耗低噪声神经信号放大器的设计。微阵列技术的出现推动了对植入式电子电路的需求,以检测细胞外神经信号(ENG)。为了提高增益和降低功耗,提出了一种采用gm升压的全差分低噪声放大器(LNA)前置放大器。采用反并联二极管连接的PMOS实现了低频高通功能。仿真结果表明,在100Hz ~ 5 KHz范围内,输入参考噪声为1.24μVrms,中频电压增益为44.6dB,功耗为18.74μw。利用180nm技术的Cadence光谱模拟器对结果进行了验证。仿真结果表明,该植入式放大器适用于癫痫发作预测。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Low power ENG signal acquisition amplifier for Epileptic Seizure Prediction
This paper deals with the design of low power low noise neural signal amplifier for Epileptic Seizure Prediction. The advent of Micro-electro Arrays has driven the need for implantable electronic circuitry to detect those Extracellular neural signals (ENG). We proposed a preamplifier of fully differential Low Noise Amplifier (LNA) with gm boosting in order to enhance the gain as well as reduce the power consumption. Low frequency high pass function has been realized with anti-parallel Diode connected PMOS. Simulation results shows that the input referred noise is 1.24μVrms from 100Hz to 5 KHz, mid-band voltage gain of 44.6dB, and the power consumption is 18.74μw. The results are validated using Cadence spectre simulator with 180nm technology. Simulation results show that this implantable amplifier is suitable for Epileptic seizure prediction.
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