{"title":"用于癫痫发作预测的低功率ENG信号采集放大器","authors":"J. Alexander, M. S. Lakshmi, M. Renuga","doi":"10.1109/SCEECS.2012.6184790","DOIUrl":null,"url":null,"abstract":"This paper deals with the design of low power low noise neural signal amplifier for Epileptic Seizure Prediction. The advent of Micro-electro Arrays has driven the need for implantable electronic circuitry to detect those Extracellular neural signals (ENG). We proposed a preamplifier of fully differential Low Noise Amplifier (LNA) with gm boosting in order to enhance the gain as well as reduce the power consumption. Low frequency high pass function has been realized with anti-parallel Diode connected PMOS. Simulation results shows that the input referred noise is 1.24μVrms from 100Hz to 5 KHz, mid-band voltage gain of 44.6dB, and the power consumption is 18.74μw. The results are validated using Cadence spectre simulator with 180nm technology. Simulation results show that this implantable amplifier is suitable for Epileptic seizure prediction.","PeriodicalId":372799,"journal":{"name":"2012 IEEE Students' Conference on Electrical, Electronics and Computer Science","volume":"13 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Low power ENG signal acquisition amplifier for Epileptic Seizure Prediction\",\"authors\":\"J. Alexander, M. S. Lakshmi, M. Renuga\",\"doi\":\"10.1109/SCEECS.2012.6184790\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper deals with the design of low power low noise neural signal amplifier for Epileptic Seizure Prediction. The advent of Micro-electro Arrays has driven the need for implantable electronic circuitry to detect those Extracellular neural signals (ENG). We proposed a preamplifier of fully differential Low Noise Amplifier (LNA) with gm boosting in order to enhance the gain as well as reduce the power consumption. Low frequency high pass function has been realized with anti-parallel Diode connected PMOS. Simulation results shows that the input referred noise is 1.24μVrms from 100Hz to 5 KHz, mid-band voltage gain of 44.6dB, and the power consumption is 18.74μw. The results are validated using Cadence spectre simulator with 180nm technology. Simulation results show that this implantable amplifier is suitable for Epileptic seizure prediction.\",\"PeriodicalId\":372799,\"journal\":{\"name\":\"2012 IEEE Students' Conference on Electrical, Electronics and Computer Science\",\"volume\":\"13 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-03-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 IEEE Students' Conference on Electrical, Electronics and Computer Science\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SCEECS.2012.6184790\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 IEEE Students' Conference on Electrical, Electronics and Computer Science","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SCEECS.2012.6184790","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Low power ENG signal acquisition amplifier for Epileptic Seizure Prediction
This paper deals with the design of low power low noise neural signal amplifier for Epileptic Seizure Prediction. The advent of Micro-electro Arrays has driven the need for implantable electronic circuitry to detect those Extracellular neural signals (ENG). We proposed a preamplifier of fully differential Low Noise Amplifier (LNA) with gm boosting in order to enhance the gain as well as reduce the power consumption. Low frequency high pass function has been realized with anti-parallel Diode connected PMOS. Simulation results shows that the input referred noise is 1.24μVrms from 100Hz to 5 KHz, mid-band voltage gain of 44.6dB, and the power consumption is 18.74μw. The results are validated using Cadence spectre simulator with 180nm technology. Simulation results show that this implantable amplifier is suitable for Epileptic seizure prediction.